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June 16, 2010

RFMD Introduces Highly Integrated Single-Chip Module to Support 900 MHz ISM Band


RF Micro Devices (News - Alert), a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies, announced the availability of the RF3858 front end module. The RF3858 FEM supports multiple Tx/Rx applications in the 900 MHz ISM band, including Smart Energy/Advanced Metering Infrastructure (AMI).
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The highly integrated, single-chip RF3858 addresses the increasing requirements for aggressive size reductions in the RF front end designs for portable equipment. The RF3858 combines a 1-watt 915 MHz power amplifier capable of 31.5 dBm (News - Alert) of output power, with a double-pole double-throw (DPDT) Tx/Rx transfer switch with low insertion loss and high isolation, a low noise amplifier (LNA) with bypass mode, and a Tx harmonic filter.
 
The RF3858 reduces the number of external components by approximately 80% versus discrete designs, greatly minimizing product footprint, accelerating design-in time and reducing overall assembly costs. The RF3858 is packaged in a small 8.0 mm x 8.0 mm x 1.2 mm over-molded laminate package with backside ground, minimizing next level board space and allowing for simplified integration.
 
The RF3858 is priced at $2.28 in quantities of 10,000 and is available immediately.
 
Read here about how China Telecom has selected C2K-ATS from Spirent (News - Alert) to test EV-DO Revision B (Rev. B) mobile devices. China Telecom can now ensure superior subscriber quality of experience (QoE) for mobile device and smartphones with this agreement.

Hans Lewis is a contributing editor for TMCnet. To read more of his articles, please visit his columnist page.

Edited by Marisa Torrieri
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